Growth and characterization of thin films prepared from perfluoro-isopropyl-substituted perfluorophthalocyaninesKEIL, C; TSARYOVA, O; LAPOLC, L et al.Thin solid films. 2009, Vol 517, Num 15, pp 4379-4384, issn 0040-6090, 6 p.Article

Etching-back of uniaxially strained silicon on insulator investigated by spectroscopic ellipsometryHIMCINSCHI, C; SINGH, R; MOUTANABBIR, O et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 841-844, issn 1862-6300, 4 p.Conference Paper

Growth peculiarities during vapor-liquid-solid growth of silicon nanowhiskers by electron-beam evaporation : Semiconductor nanowiresSIVAKOV, V; ANDRÄ, G; HIMCINSCHI, C et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 85, Num 3, pp 311-315, issn 0947-8396, 5 p.Article

Applic Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuitsRUDRA, S; WÄCHTLER, T; GESSNER, T et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 4, pp 922-926, issn 1862-6300, 5 p.Conference Paper

High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applicationsSINGH, R; RADU, I; REICHE, M et al.Applied surface science. 2007, Vol 253, Num 7, pp 3595-3599, issn 0169-4332, 5 p.Article

Orientation of perylene derivatives on semiconductor surfacesKAMPEN, T. U; SALVAN, G; PARAIAN, A et al.Applied surface science. 2003, Vol 212-13, pp 501-507, issn 0169-4332, 7 p.Conference Paper

Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel filmsMURRAY, C; FLANNERY, C; STREITER, I et al.Microelectronic engineering. 2002, Vol 60, Num 1-2, pp 133-141, issn 0167-9317Conference Paper

Investigation of helium implantation induced blistering in InPSINGH, R; RADU, I; SCHOLZ, R et al.Journal of luminescence. 2006, Vol 121, Num 2, pp 379-382, issn 0022-2313, 4 p.Conference Paper

Spectroscopic ellipsometric characterization of organic films obtained via organic vapor phase depositionHIMCINSCHI, C; MEYER, N; ZAHN, D. R. T et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 3, pp 551-555, issn 0947-8396, 5 p.Article

Infrared spectroscopic investigations of the buried interface in silicon bonded wafersHIMCINSCHI, C; FRIEDRICH, M; HILLER, K et al.Semiconductor science and technology. 2004, Vol 19, Num 5, pp 579-585, issn 0268-1242, 7 p.Article

Contributions to the static dielectric constant of low-k xerogel films derived from ellipsometry and IR spectroscopyHIMCINSCHI, C; FRIEDRICH, M; FRÜHAUF, S et al.Thin solid films. 2004, Vol 455-56, pp 433-437, issn 0040-6090, 5 p.Conference Paper

Modelling absorption and photoluminescence of TPDVRAGOVIC, Igor; CALZADO, Eva M; DIAZ GARCIA, Maria A et al.Journal of luminescence. 2008, Vol 128, Num 5-6, pp 845-847, issn 0022-2313, 3 p.Conference Paper

Optical properties and molecular orientation in organic thin films : Organic-inorganic semiconductor interfacesFRIEDRICH, M; GAVRILA, G; BARO, A. M et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 38, pp S2699-S2718, issn 0953-8984Article

Ellipsometric study of the change in the porosity of silica xerogels after chemical modification of the surface with hexamethyldisilazaneHIMCINSCHI, C; FRIEDRICH, M; FRÜHAUF, S et al.Analytical and bioanalytical chemistry. 2002, Vol 374, Num 4, pp 654-657, 4 p.Conference Paper

Characterization of silica xerogel films by variable-angle spectroscopic ellipsometry and infrared spectroscopyHIMCINSCHI, C; FRIEDRICH, M; MURRAY, C et al.Semiconductor science and technology. 2001, Vol 16, Num 9, pp 806-811, issn 0268-1242Article

Resonant Raman scattering of ZnS, ZnO, and ZnS/ZnO core/shell quantum dotsMILEKHIN, A. G; YERYUKOV, N. A; SVESHNIKOVA, L. L et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 107, Num 2, pp 275-278, issn 0947-8396, 4 p.Article

Uniaxially strained silicon by wafer bonding and layer transferHIMCINSCHI, C; RADU, I; MUSTER, F et al.Solid-state electronics. 2007, Vol 51, Num 2, pp 226-230, issn 0038-1101, 5 p.Conference Paper

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bondingSINGH, R; RADU, I; SCHOLZ, R et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1311-1314, issn 0268-1242, 4 p.Article

Scaling down thickness of ULK materials for 65 nm node and below and its effect on electrical performanceFRUHAUF, S; HIMCINSCHI, C; RENNAU, M et al.Microelectronic engineering. 2005, Vol 82, Num 3-4, pp 405-410, issn 0167-9317, 6 p.Conference Paper

VASE and IR spectroscopy: excellent tools to study biaxial organic molecular thin films: DiMe-PTCDI on S-passivated GaAs(100)FRIEDRICH, M; HIMCINSCHI, C; SALVAN, G et al.Thin solid films. 2004, Vol 455-56, pp 586-590, issn 0040-6090, 5 p.Conference Paper

Crystallinity of PTCDA films on silicon derived via optical spectroscopic measurementsSALVAN, G; HIMCINSCHI, C; KOBITSKI, A. Yu et al.Applied surface science. 2001, Vol 175-76, pp 363-368, issn 0169-4332Conference Paper

Silicon oxide in Si-Si bonded wafersHIMCINSCHI, C; MILEKHIN, A; FRIEDRICH, M et al.Applied surface science. 2001, Vol 175-76, pp 715-720, issn 0169-4332Conference Paper